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Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data
INA-02184 INA-02186
Features
* Cascadable 50 Gain Block * Low Noise Figure: 2.0 dB Typical at 0.5 GHz * High Gain: 31 dB Typical at 0.5 GHz 26 dB Typical at 1.5 GHz * 3 dB Bandwidth: DC to 0.8 GHz * Unconditionally Stable (k>1) * Low Cost Plastic Package
Circuit (MMIC) feedback amplifiers housed in low cost plastic packages. They are designed for narrow or wide bandwidth commercial applications that require high gain and low noise IF or RF amplification. The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Package 84
Package 86
Description
The INA-02184 and INA-02186 are low-noise silicon bipolar Monolithic Microwave Integrated
Typical Biasing Configuration
VCC RFC (Optional) Rbias Cblock RF IN 1 2 4 3 Vd = 5.5 V Cblock RF OUT
5965-9675E
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INA-02184, -02186 Absolute Maximum Ratings
Parameter Device Current Power Dissipation [2,3,4] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 400 mW +13 dBm +150C -65 to 150C Thermal Resistance[2]: jc = 90C/W -- INA-02184 jc = 100C/W -- INA-02186
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 11.1 mW/C for TC > 144C for INA-02184. 4. Derate at 10 mW/C for TC > 110C for INA-02186.
INA-02184, -02186 Electrical Specifications[1], TA = 25C
GP GP f3 dB ISO VSWR NF P1 dB IP3 tD Vd dV/dT Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Reverse Isolation (|S12| 2) Input VSWR (Max over Freq. Range) Output VSWR (Max over Freq. Range) 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.01 to 1.0 GHz f = 0.01 to 1.0 GHz f = 0.01 to 1.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz dB dBm dBm psec V mV/C f = 0.5 GHz f = 0.01 to 1.0 GHz dB dB GHz dB
INA-02184
INA-02186
Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 Units Min. Typ. Max. Min. Typ. Max.
29.0 31.0 2.0 0.8 39 1.5 1.7 2.0 11 23 330 4.0 5.5 +10 7.0 4.0 29.0 31.0 2.0 0.8 39 2.0 1.7 2.0 11 23 350 5.5 +10 7.0
Notes: 1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP).
INA-02184, -02186 Part Number Ordering Information
Part Number INA-02184-TR1 INA-02184-BLK INA-02186-TR1 INA-02186-BLK No. of Devices 1000 100 1000 100 Container 7" Reel Antistatic Bag 7" Reel Antistatic Bag
For more information, see "Tape and Reel Packaging for Semiconductor Devices".
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INA-02184, -02186 Typical Performance, TA = 25C
(unless otherwise noted)
35 Gain Flat to DC 40 30 3.0 Id (mA) 30 3.5 50 TC = +85C TC = +25C TC = -25C Gp (dB) 35 0.1 GHz 0.5 GHz 30 1.0 GHz 1.5 GHz
NF (dB)
Gp (dB)
25
2.5
25
20
20
2.0 10
20
15 .01 .02 .05 0.1 0.2 0.5 1.0 FREQUENCY (GHz)
1.5 2.0
0 0 2 4 Vd (V) 6 8
15 20
30 Id (mA)
40
50
Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25C, Id = 35 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
15 32 Gp (dB) 31 P1 dB (dBm) P1 dB (dBm) 30 P1 dB 13 11 2.5 NF NF (dB) 2.0 9 Gp Id = 40 mA 12
3.5
3.0 Id = 35 mA NF (dB) 9 Id = 30 mA 6 2.0 3 Id = 30 to 40 mA 2.5
1.5 -55
-25
+25
+85
+125
0 .02
.05
0.1
0.2
0.5
1.0
2.0
1.5 .02
.05
0.1
0.2
0.5
1.0
2.0
TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 0.5 GHz, Id = 35 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
2.00:1 INA-02184 INA-02186 1.75:1
2.00:1 INA-02184 INA-02186 1.75:1
1.50:1
1.50:1
1.25:1
1.25:1
1.00:1 .02
.05
0.1
0.2
0.5
1.0
2.0
1.00:1 .02
.05
0.1
0.2
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. Input VSWR vs. Frequency, Id = 35 mA.
Figure 8. Output VSWR vs. Frequency, Id = 35 mA.
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Typical INA-02184 Scattering Parameters (ZO = 50 , TA = 25C, Id = 35 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.01 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 3.50 4.00
.09 .09 .10 .13 .15 .18 .19 .20 .19 .17 .15 .15 .16 .18 .19 .23 .27 .30 .33
-176 -171 -163 -159 -161 -168 -175 179 166 159 159 163 168 168 165 159 150 143 133
31.9 31.9 31.8 31.7 31.4 31.2 31.0 30.7 29.9 28.4 26.8 24.8 22.6 20.7 18.8 14.9 11.5 8.8 6.6
39.33 39.24 39.07 38.30 37.30 36.42 35.40 34.20 31.21 26.36 21.89 17.36 13.59 10.86 8.71 5.56 3.76 2.74 2.14
-1 -6 -13 -26 -39 -51 -63 -75 -101 -126 -149 -169 175 161 149 127 106 89 73
-40.0 -41.9 -40.9 -40.0 -38.4 -39.2 -40.0 -37.1 -38.4 -36.5 -34.0 -33.2 -31.4 -31.1 -30.2 -29.1 -27.1 -26.0 -25.0
.010 .008 .009 .010 .012 .011 .010 .014 .012 .015 .020 .022 .027 .028 .031 .035 .044 .050 .056
1 -12 1 15 16 32 34 35 38 53 56 62 67 61 64 56 65 57 62
.25 .25 .25 .23 .22 .21 .21 .21 .24 .24 .22 .18 .14 .11 .08 .05 .04 .04 .05
-1 -4 -8 -13 -17 -15 -16 -17 -26 -41 -60 -78 -93 -108 -125 -167 156 137 137
1.40 1.66 1.52 1.44 1.29 1.39 1.52 1.24 1.44 1.40 1.31 1.50 1.50 1.74 1.92 2.54 2.89 3.39 3.78
Typical INA-02186 Scattering Parameters (ZO = 50 , TA = 25C, Id = 35 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.01 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 3.50 4.00
.09 .09 .11 .14 .18 .22 .25 .28 .31 .30 .27 .24 .21 .20 .20 .23 .27 .31 .34
-178 -172 -160 -153 -156 -161 -169 -177 165 148 135 129 128 129 131 133 130 124 118
31.5 31.5 31.5 31.4 31.3 31.2 31.1 30.9 30.2 28.8 27.0 24.7 22.5 20.4 18.4 14.5 11.2 8.3 6.1
37.38 37.55 37.46 37.04 36.62 36.20 35.70 34.94 32.34 27.64 22.26 17.22 13.27 10.42 8.34 5.29 3.61 2.60 2.02
-1 -6 -13 -25 -37 -49 -61 -74 -101 -129 -153 -173 170 156 144 123 103 86 70
-40.0 -37.7 -39.2 -40.9 -38.4 -37.7 -39.2 -38.4 -36.5 -34.4 -32.4 -31.1 -31.4 -29.1 -29.1 -27.1 -25.7 -24.4 -23.4
.010 .013 .011 .009 .012 .013 .011 .012 .015 .019 .024 .028 .027 .035 .035 .044 .052 .060 .068
1 11 8 15 1 28 42 44 52 57 62 61 62 61 63 59 63 64 58
.24 .24 .23 .22 .21 .19 .18 .16 .15 .12 .09 .07 .04 .02 .01 .02 .02 .02 .01
-1 -5 -9 -17 -25 -30 -35 -39 -47 -59 -70 -80 -82 -83 -20 30 27 34 30
1.46 1.22 1.37 1.60 1.30 1.25 1.40 1.33 1.20 1.15 1.15 1.23 1.52 1.50 1.79 2.15 2.56 2.97 3.28
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Emitter Inductance and Performance
As a direct result of their circuit topology, the performance of INA MMICs is extremely sensitive to groundpath ("emitter") inductance. The two stage design creates the possibility of a feedback loop being formed through the ground returns of the stages. If the path to ground provided by the external circuit is "long" (high in impedance) compared to the path back through the ground return of the other stage, then instability can occur (see Fig. 1). This phenomena can show up as a "peaking" in the gain versus frequency response (perhaps creating a negative gain slope amplifier), an increase in input VSWR, or even as return gain (a
reflection coefficient greater than unity) at the input of the MMIC. The "bottomline" is that excellent grounding is critical when using INA MMICs. The use of plated through holes or equivalent minimal path ground returns at the device is essential. An appropriate layout is shown in Figure 2. A corollary is that designs should be done on the thinnest practical substrate. The parasitic inductance of a pair of via holes passing through 0.032" thick P.C. board is approximately 0.1 nH, while that of a pair of via holes passing through 0.062" thick board is close to 0.5 nH. HP does not recommend using INA family MMICs on boards thicker than 32 mils.
These stability effects are entirely predictable. A circuit simulation using the data sheet S-parameters and including a description of the ground return path (via model or equivalent "emitter" inductance) will give an accurate picture of the performance that can be expected. Device characterizations are made with the ground leads of the MMIC directly contacting a solid copper block (system ground) at a distance of 2 to 4 mils from the body of the package. Thus the information in the data sheet is a true description of the performance capability of the MMIC, and contains minimal contributions from fixturing.
Figure 1. INA Potential Ground Loop.
Figure 2. INA Circuit Board 2x Actual Size.
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Package 84 Dimensions
0.51 (0.020) 4 GROUND RF OUTPUT AND DC BIAS 3
Package 86 Dimensions
0.51 0.13 (0.020 0.005) 4
N02
RF INPUT 1 2
N02
45 1
GROUND
C L 3 2.34 0.38 (0.092 0.015)
2
2.15 (0.085)
1.52 0.25 (0.060 0.010)
0.20 0.050 (0.008 0.002)
2.67 0.38 (0.105 0.15) 0.203 0.051 (0.006 0.002)
5 TYP.
5
1.52 0.25 (0.060 0.010) 5.46 0.25 (0.215 0.010)
0.66 0.013 (0.026 0.005) 0.30 MIN (0.012 MIN)
8 MAX 0 MIN 2.16 0.13 (0.085 0.005)
0.51 (0.020)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
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